Carrier-induced changes in the phase resolved reflection of GaAs quantum wells

European Physical Journal B

Volumn 30, Issue 3, 2002, Pages 303-312

  Nacke, Ch ^a   Stolz, H ^a   Manzke, G ^a   Henneberger, K ^a  

^a UNIVERSITY OF ROSTOCK   (Germany)

Author keywords

71.35. y Excitons and related phenomena; 71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons; 78.20. e Optical properties of bulk materials and thin films; 78.67.De Quantum wells

Indexed keywords

EID: 0041401350     PISSN: 14346028     EISSN: None     Source Type: Journal    
DOI: 10.1140/epjb/e2002-00383-6     Document Type: Article

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32. Note, to convert the experimental fluences into carrier densities, an additional factor of 2 is required to take into account the smaller spot size of the test pulse