Multilevel aluminum dual-damascene interconnects for process-step reduction in 0.18 μm ULSIs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2360-2367

  Shiba, Kazutoshi ^a   Wakabayashi, Hitoshi ^a   Takewaki, Toshiyuki ^a   Kikuta, Kuniko ^a   Kubo, Akira ^a   Yamasaki, Shinya ^a   Hayashi, Yoshihiro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Al interconnect; Borderless via; Dual damascene interconnect; KrF lithography; SiON film; Stacked via

Indexed keywords

EID: 0041390870     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2360     Document Type: Article

References (14)

1. S. Takahashi, M. Edahiro and Y. Hayashi: Proc. Asia and South Pacific Design Automation Conf. 1998, Yokohama, 1998 (IEEE, New York, 1998) p. 51.
2. J. A. Davis, V. K. De and J. D. Meindl: 1996 Symp. VLSI Technology Honolulu, 1996 (IEEE, New York, 1996) p. 78.
3. C. W. Kaanta, S. G. Bombardier, W. J. Cote, W. R. Hill, G. Kerszykowski, H. S. Landis, D. J. Poindexter, C. W. Pollard, G. H. Ross, J. G. Ryan, S. Wolff and J. E. Cronin: Proc. 1991 VLSI Multilevel Interconnect Conf, Santa Crara, 1991 (IEEE, New York, 1991) p. 144.
4. L. A. Clevenger, G. Costrini, D. M. Dobuzinsky, R. Filippi, J. Gambino, M. Hoinkis, L. Gignac, J. L. Hurd, R. C. Iggulden, C. Lin, R. Longo, G. Z. Lu, J. Ning, J. F. Nuetzel, R. Ploessl, K. Rodbell, M. Ronay, R. F. Schnabel, D. Tobben, S. J. Weber, L. Chen, S. Chiang, T. Guo, R. Mosely, S. Voss and L. Yang: Proc. Int. Interconnect Technology Conf. San Francisco, 1998 (IEEE, New York, 1998) p. 137.
5. Y. Hayashi and T. Nakajima: Materia Jpn. 36 (1997) 593.
6. W. W. Lee, Q. He, A. Chatterjee, G. Xing, K. Brennan, A. Singh, E. Zielinski, M. Hanratty, S. Fang, D. Rogers, G. Dixit, D. Carter, JD Luttmer, B. Havemann and R. A. Chapman: 1998 Symp. VLSI Technology, Honolulu. 1998 (IEEE, New York, 1998) p. 86.
7. K. Shiba, H. Wakabayashi, T. Takewaki, K. Kikuta, A. Kubo, S. Yamasaki and Y. Hayashi: Ext. Abstr. 1998 Int. Conf. Solid State Devices and Materials, Hiroshima, 1998 (Business Center for Academic Societies Japan, Tokyo, 1998) p. 280.
8. Y. Trouiller, N. Buffet, T. Mourier, Y. Gobil, P. Schiavone and Y. Quere: Proc. SPIE Conf. Multilevel Interconnect Technology II, Santa Clara, 1998 (SPIE, Washington, 1998) p. 122.
9. Handbook of Optical Constants of Solids, ed. E. D. Palik (Academic Press, Orlando, 1985) p. 369.
10. S. Takahashi, M. Edahiro and Y. Hayashi: 1998 IEEE Int. Electron Devices Meet. San Francisco, 1998 (IEEE, New York, 1998) p. 833.
11. K. Kikuta, T. Nakajima, K. Ueno and T. Kikkawa: 1993 IEEE Int. Electron Devices Meet. Washington D. C. 1993 (IEEE, New York, 1993) p. 285.
12. D. Jawarani, J. P. Stark, H. Kawasaki, J. O. Olowolafe, C. C. Lee, J. Klein and F. Pintchovski: J. Electrochem. Soc. 141 (1994) 302.
13. J. Wada, Y. Oikawa, T. Katata, N. Nakamura and M. B. Anand: 1998 Symp. VLSI Technology, Honolulu, 1998 (IEEE, New York, 1998) p. 48.
14. J. McGeown: Advanced Metallization and Interconnect Systems for ULSI Applications in 1995 (Material Research Society, Pittsburgh, 1996) p. 635.