High-Speed GaAs Epitaxial Lift-Off and Bonding with High Alignment Accuracy Using a Sapphire Plate

Journal of the Electrochemical Society

Volumn 146, Issue 2, 1999, Pages 710-712

  Sasaki, Y ^a   Katayama, T ^a   Koishi, T ^a   Shibahara, K ^a   Yokoyama, S ^a   Miyazaki, S ^a   Hirose, M ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; HETEROJUNCTIONS; HYDROFLUORIC ACID; LUMINESCENCE OF SOLIDS; PRESSURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACE ACTIVE AGENTS; THERMAL EFFECTS;

EPITAXIAL LIFT-OFF TECHNIQUE; SAPPHIRE PLATE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0033077334     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391668     Document Type: Article

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