Low-temperature-grown MBE GaAs for terahertz photomixers

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Volumn , Issue , 2001, Pages 155-159

  Mikulics, M ^a   Marso, M ^a   Adam, R ^a   Fox, A ^a   Buca, D ^a   Forster A ^a   Kordos P ^a   Xu, Y ^a   Sobolewski, R ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ENERGY GAP; MIXER CIRCUITS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL CONDUCTIVITY OF SOLIDS;

CARRIER LIFETIME; METAL SEMICONDUCTOR METAL STRUCTURES; METALLIC CONTACTS; SUBSTRATE TEMPERATURE; SURFACE CONTACTS; TERAHERTZ PHOTOMIXERS;

PHOTODETECTORS;

EID: 0035573279     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)