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Volumn 346, Issue 1-3, 1996, Pages 136-144

Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy

Author keywords

Gallium arsenide; Growth; Low index single crystal surfaces; Molecular beam epitaxy; Scanning tunneling microscopy; Surface structure, morphology, roughness, and topography

Indexed keywords

ARSENIC COMPOUNDS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; SURFACE ROUGHNESS; SURFACE STRUCTURE; SURFACES; THERMAL EFFECTS;

EID: 0030083322     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)00939-6     Document Type: Article
Times cited : (13)

References (47)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.