Intense 1.5 μm emission from InAs quantum dots on exact and vicinal (001) InP surface grown by droplet hetero-epitaxy using OMVPE

Materials Science and Engineering B

Volumn 57, Issue 1, 1998, Pages 84-86

  Nonogaki, Y ^a   Iguchi, T ^a   Fuchi, S ^a   Fujiwara, Y ^a   Takeda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

InAs quantum dot; OMVPE; Photoluminescence; Vicinal (001) InP surface

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; SURFACE STRUCTURE;

IN AS QUANTUM DOT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0040635172     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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