Electron-trapping-triggered anneal of defect states in silicon-rich hydrogenated amorphous silicon nitride

Journal of Applied Physics

Volumn 82, Issue 1, 1997, Pages 281-285

  Oversluizen, G ^a   Lodders, W H M ^a   Johnson, M T ^a   Van Der Put, A A ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040566821     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365809     Document Type: Article

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