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Volumn 198-200, Issue PART 1, 1996, Pages 474-477
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Stability versus structure in glow discharge hydrogenated amorphous silicon obtained from a wide range of deposition conditions
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
CHEMICAL BONDS;
CRYSTAL DEFECTS;
CRYSTAL STRUCTURE;
DEPOSITION;
GLOW DISCHARGES;
HELIUM;
HYDROGEN;
HYDROGENATION;
KINETIC THEORY;
LIGHT;
MATHEMATICAL MODELS;
ANNEALING DEFECTS;
DEFECT CREATION KINETICS;
DILUTE PHASE SILICON HYDROGEN BOND CONCENTRATIONS;
FILM DEPOSITION;
GLOW DISCHARGE HYDROGENATED AMORPHOUS SILICON;
LIGHT INDUCED CREATION OF DEFECTS;
LIGHT INDUCED RECOVERY OF DEFECTS;
AMORPHOUS FILMS;
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EID: 11744257059
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-3093(95)00739-3 Document Type: Article |
Times cited : (10)
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References (12)
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