SCOPUS 정보 검색 플랫폼

Chinese Physics Letters

Volumn 17, Issue 6, 2000, Pages 451-453

Preparation of Si nanocrystals using anodic porous alumina template formed on silicon substrate

(6) Wu, Jun Hui a Pu, Lin a Zou, Jian Ping a Mei, Yong Feng a Zhu, Jian Min a Bao, Xi Mao a

a NANJING UNIVERSITY (China)

Author keywords

78. 55. Mb; 81. 05. Ys; 81. 15. Jj

Indexed keywords

ALUMINA; ALUMINUM OXIDE; AMORPHOUS SILICON; ANODIC OXIDATION; ELECTROLYTES; FILM PREPARATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION BEAMS; NANOCRYSTALS; POROUS SILICON; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

05.; 15.; 55.; 78.; 81.; JJ; MB; SI NANOCRYSTAL; YS;

ION BOMBARDMENT;

EID: 0040438424 PISSN: 0256307X EISSN: None Source Type: Journal
DOI: 10.1088/0256-307X/17/6/024 Document Type: Article

Times cited : (8)

References (15)

1
- 84975391144
- F. Keller, M. S. Hunter and D. L. Robinson, J. Electrochem. Soc. 100 (1953) 411.
- (1953) J. Electrochem. Soc. , vol.100 , pp. 411
- Keller, F.¹ Hunter, M.S.² Robinson, D.L.³

2
- 0014936017
- J. P. O'Sullivan and G. C. Wood, Proc. R. Soc. A317 (1970) 511.
- (1970) Proc. R. Soc. , vol.A317 , pp. 511
- O'Sullivan, J.P.¹ Wood, G.C.²

3
- 4444289857
- H. Masuda and K. Fukuda, Science, 268 (1995) 1466.
- (1995) Science , vol.268 , pp. 1466
- Masuda, H.¹ Fukuda, K.²

4
- 0031140456
- H. Masuda, F. Hasegwa and S. Ono, J. Electrochem. Soc. 144 (1997) L127.
- (1997) J. Electrochem. Soc. , vol.144
- Masuda, H.¹ Hasegwa, F.² Ono, S.³

5
- 0005656995
- O. Jessensky, F. Müller and U. Gösele, Appl. Phys. Lett. 72 (1998) 1173.
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1173
- Jessensky, O.¹ Müller, F.² Gösele, U.³

6
- 21544444504
- M. I. J. Beale, J. D. Benjamin, M. J. Uren, N. G. Chew and A. G. Cullis, J. Cryst. Growth, 73 (1985) 622.
- (1985) J. Cryst. Growth , vol.73 , pp. 622
- Beale, M.I.J.¹ Benjamin, J.D.² Uren, M.J.³ Chew, N.G.⁴ Cullis, A.G.⁵

7
- 0031322211
- WANG Guan-zhong, LI Peng, MA Yu-rong and FANG Rong-chuan, Chin. Phys. Lett. 14 (1997) 124.
- (1997) Chin. Phys. Lett. , vol.14 , pp. 124
- Wang, G.-Z.¹ Li, P.² Ma, Y.-R.³ Fang, R.-C.⁴

8
- 36448999283
- P. Hoyer, N. Baba and H. Masuda, Appl. Phys. Lett. 66 (1995) 2700.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 2700
- Hoyer, P.¹ Baba, N.² Masuda, H.³

9
- 0028417263
- D . AlMawlawi, C . Z. Liu and Martin Moskovits, J. Mater. Res. 9 (1994) 1014.
- (1994) J. Mater. Res. , vol.9 , pp. 1014
- AlMawlawi, D.¹ Liu, C.Z.² Moskovits, M.³

10
- 34548060883
- D . AlMawlawi, N . Coombs and M . Moskovits, J. Appl. Phys. 70 (1991) 4421.
- (1991) J. Appl. Phys. , vol.70 , pp. 4421
- AlMawlawi, D.¹ Coombs, N.² Moskovits, M.³

11
- 0000684647
- H. Masuda, H. Yamada, M. Satoh, H. Atsoh, M. Nakao and T. Tamamura, Appl. Phys. Lett. 71 (1997) 2770.
- (1997) Appl. Phys. Lett. , vol.71 , pp. 2770
- Masuda, H.¹ Yamada, H.² Satoh, M.³ Atsoh, H.⁴ Nakao, M.⁵ Tamamura, T.⁶

12
- 0001134033
- G. H. Pontifex, P. Zhang, Z. Wang, T. L. Haslett, D. Almawlawi and M. Moskovits, J. Phys. Chem. 95 (1991) 9989.
- (1991) J. Phys. Chem. , vol.95 , pp. 9989
- Pontifex, G.H.¹ Zhang, P.² Wang, Z.³ Haslett, T.L.⁴ Almawlawi, D.⁵ Moskovits, M.⁶

13
- 0029733028
- H. Masuda and M. Satoh, Jpn. J. Appl. Phys. 35 (1996) L126.
- (1996) Jpn. J. Appl. Phys. , vol.35
- Masuda, H.¹ Satoh, M.²

14
- 0001519427
- S. L. Sung, S. H. Tsai, C. H. Tseng, F. K. Chiang, X. W. Liu and H. C. Shih, Appl. Phys. Lett. 74 (1999) 197.
- (1999) Appl. Phys. Lett. , vol.74 , pp. 197
- Sung, S.L.¹ Tsai, S.H.² Tseng, C.H.³ Chiang, F.K.⁴ Liu, X.W.⁵ Shih, H.C.⁶

15
- 0033108528
- in Chinese
- J. H. Wu, J. P. Zou, Q. Zhu and X. M. Bao, J. Semiconduct. 20 (1999) 314 (in Chinese).
- (1999) J. Semiconduct. , vol.20 , pp. 314
- Wu, J.H.¹ Zou, J.P.² Zhu, Q.³ Bao, X.M.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.