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Volumn 14, Issue 2, 1997, Pages 124-127

Junction current drift effect of the Cu/porous Si device prepared by electrodeposition

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODEPOSITION; HEAVY IONS; POROUS SILICON;

EID: 0031322211     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/14/2/013     Document Type: Article
Times cited : (2)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.