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Volumn 14, Issue 2, 1997, Pages 124-127
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Junction current drift effect of the Cu/porous Si device prepared by electrodeposition
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRODEPOSITION;
HEAVY IONS;
POROUS SILICON;
CU IONS;
CURRENT INCREASE;
DRIFT EFFECTS;
DRIFT PROCESS;
DRIFT TIME;
FORWARD BIAS;
JUNCTION CURRENTS;
POROUS SI;
SI DEVICES;
SILICON DEVICES;
ELECTRODES;
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EID: 0031322211
PISSN: 0256307X
EISSN: None
Source Type: Journal
DOI: 10.1088/0256-307X/14/2/013 Document Type: Article |
Times cited : (2)
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References (18)
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