25 nm pitch GalnAs/InP buried structure: Improvement by calixarene as an electron beam resist and tertiarybutylphosphine as a P source in organometallic vapor phase epitaxy regrowth

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 6, 1998, Pages 3894-3898

  Miyamoto, Y ^a   Kokubo, A ^a   Hattori, T ^a   Hongo, H ^a   Suhara, M ^a   Furuya, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040402487     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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3. H. Hongo, Y. Miyamoto, J. Suzuki, T. Hattori, A. Kokubo, M. Suhara, and K. Furuya, Jpn. J. Appl. Phys., Part 1 37, 1518 (1998).
4. J. Fujita, Y. Ohnishi, Y. Ochiai, and S. Matsui, Appl. Phys. Lett. 68, 1297 (1996).
5. E. Inamura, Y. Miyamoto, S. Tamura, T. Takasugi, and K. Furuya, Jpn. J. Appl. Phys., Part 1 28, 2193 (1989).
6. J. Fujita, Y. Ohnishi, Y. Ochiai, S. Manako, E. Nomura, and S. Matsui, Annual Meeting of Japan Society of Applied Physics, October 1996, paper 9a-S-4.
7. L. A. Coldren, K. Furuya, B. I. Miller, and J. A. Rentschler, Electron. Lett. 18, 235 (1982).
8. M. Suhara, Y. Miyamoto, H. Hongo, J. Suzuki, and K. Furuya, J. Cryst. Growth 145, 698 (1994).
9. J. Komeno, J. Cryst. Growth 145, 468 (1994).