Wrapped alignment marks for fabrication of interference/diffraction hot electron devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1518-1521

  Hongo, Hiroo ^a   Miyamoto, Yasuyuki ^a   Suzuki, Jun ^a   Suhara, Michihiko ^a   Furuya, Kazuhito ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

e beam lithography; Hot electron wave device; Mark protection; OMVPE regrowth; Quantum interference phenomena; Wrapped alignment mark

Indexed keywords

EID: 3843134104     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1518     Document Type: Article

References (6)

1. K. Furuya: J. Appl. Phys. 62 (1987) 1492.
2. H. Hongo, Y. Miyamoto, J. Suzuki, M. Funayama, T. Monta and K. Furuya: Jpn. J. Appl. Phys. 33 (1994) 925.
3. H. Hongo, Y. Miyamoto, M. Gault and K. Furuya: J. Appl. Phys. 82 (1997) 3846.
4. H. Hongo, J. Suzuki, M. Suhara, Y. Miyamoto, and K. Furuya: Jpn. J. Appl. Phys. 34 (1995) 4436.
5. R. C. Farrow, J. A. Liddle, S. D. Berger, H. A. Huggins, J. S. Kraus, R. M. Camarda, R. G. Tarascon, C. W. Jurgensen, R. P. Kola and L. Fetter: J. Vac. Sci. Technol. B 11 (1993) 2175.
6. H. Hongo, Y. Miyamoto, M. Suhara and K. Furuya: Appl. Phys. Lett. 70 (1997) 93.