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Journal of Applied Physics

Volumn 83, Issue 1, 1998, Pages 486-490

The Fermi level of annealed low-temperature GaAs on Si-δ-doped GaAs grown by molecular beam epitaxy

(5) Lee, W C a Hsu, T M a Wang, S C a Chang, M N a Chyi, J I a

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039746433 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.366719 Document Type: Article

Times cited : (3)

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