Arsenic precipitation from thin surface layers of low-temperature grown GaAs

Applied Physics Letters

Volumn 69, Issue 10, 1996, Pages 1441-1443

  Kiehl, R A ^a,b   Yamaguchi, M ^a   Ohshima, T ^a   Saito, M ^a   Yokoyama, N ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041607107     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117608     Document Type: Article

References (10)

1. F. W. Smith, A. R. Calawa, C.-L. Chen, M. J. Mantra, and L. J. Mahoney, IEEE Electron Device Lett. EDL-9, 77 (1988).
2. L.-W. Yin, N. X. Nguyen, H. Hwang, J. P. Ibbetson, R. M. Kolbas, A. C. Gossard, and U. K. Mishra, J. Electron. Mater. 22, 1503 (1993).
3. T. J. Rogers, C. Lei, B. G. Streetman, and D. G. Deppe, J. Vac. Sci. Technol. B 11, 926 (1993).
4. A. C. Warren, J. H. Burroughes, J. M. Woodall, D. T. Mclnturff, R. T. Hodgson, and M. R. Melloch, IEEE Electron Device Lett. 12, 527 (1991).
5. R. A. Kiehl, M. Saito, M. Yamaguchi, O. Ueda, and N. Yokoyama, Appl. Phys. Lett. 66, 2194 (1995).
6. L.-W. Yin, J. Ibbetson, M. M. Hashemi, W. Jiang, S.-Y. Hu, A. C. Gossard, and U. K. Mishra, Mater. Res. Soc. Symp. Proc. 241, 181 (1992).
7. G. Gagnon, A. Houdayer, J. F. Currie, and A. Azelmad, J. Appl. Phys. 70, 1036 (1991).
8. D. A. Porter and K. E. Easterling, 2nd Ed. Phase Transitions in Metals and Alloys (Chapman & Hall, London, 1992).
9. M. R. Mellock, J. M. Woodall, N. Otsuka, K. Mahalingam, C. L. Chang, and D. D. Nolle, Mater. Sci. Eng. B 22, 31 (1993).
10. D. E. Bliss, W. Walukiewicz, and E. Haller, J. Electron. Mater. 22, 1402 (1993).