Evidence of blocking effect on carrier trapping process by necking region in very narrow AIGaAs/GaAs V-grooved quantum wire structure

Journal of Applied Physics

Volumn 90, Issue 10, 2001, Pages 5438-5440

  Liu, X Q ^a,b   Sasaki, A ^a   Ohno, N ^a   Li, Z F ^b   Lu, W ^b   Shen, S C ^b   Fu, Y ^c   Willander, M ^c   Tan, H H ^d   Jagadish, C ^d  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c UNIVERSITY OF GOTHENBURG   (Sweden)

^d AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039740250     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1410317     Document Type: Article

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