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Journal of Applied Physics

Volumn 81, Issue 11, 1997, Pages 7612-7618

Passivation, structural modification, and etching of amorphous silicon in hydrogen plasmas

(7) McQuaid, S A a,c Holgado, S a Garrido, J a Martinez J a Piqueras, J a Newman, R C b Tucker, J H b

a UNIVERSIDAD AUTÓNOMA DE MADRID (Spain)

b IMPERIAL COLLEGE LONDON (United Kingdom)

c MEMC Electronic Materials Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039610670 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.365337 Document Type: Article

Times cited : (8)

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