Long-range order-disorder transition in (GaAs)1-x(Ge2)x grown on GaAs(001) and GaAs(111)

Microelectronics Journal

Volumn 31, Issue 6, 2000, Pages 439-441

  Rodriguez A G ^a   Navarro Contreras, H ^a   Vidal, M A ^a  

^a Inst de Invest en Comun Optica   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; FILM GROWTH; ORDER DISORDER TRANSITIONS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION X RAY DIFFRACTION;

SEMICONDUCTING FILMS;

EID: 0039184296     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(00)00008-2     Document Type: Article

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