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Volumn 197, Issue 4, 1999, Pages 783-788

Structural study of metastable (GaAs)1-x(Ge2)x thin films grown by RF magnetron sputtering

Author keywords

Metastables alloys; Sputtering; Structural transition; X ray diffraction

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; LATTICE CONSTANTS; MAGNETRON SPUTTERING; PHASE TRANSITIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; THIN FILMS; X RAY CRYSTALLOGRAPHY;

EID: 0033097072     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00958-0     Document Type: Article
Times cited : (9)

References (30)
  • 28
    • 0003472812 scopus 로고
    • Addison-Wesley, Reading, MA
    • B.E. Warren, X-ray Diffraction, Addison-Wesley, Reading, MA, 1969, p. 206.
    • (1969) X-ray Diffraction , pp. 206
    • Warren, B.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.