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Volumn 290-291, Issue , 1996, Pages 513-517

Thin-film tantalum-nitride resistor technology for phosphide-based optoelectronics

Author keywords

Electrical properties; Integrated circuit technology; Tantalum nitride; Thin film resistors

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; OHMIC CONTACTS; OPTOELECTRONIC DEVICES; RESISTORS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE; SPUTTER DEPOSITION; TANTALUM COMPOUNDS; THIN FILMS;

EID: 0030393726     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(06)08966-8     Document Type: Article
Times cited : (24)

References (6)
  • 5
    • 0042321249 scopus 로고
    • Determination of the relative nitrogen doping level of tantalum nitride resistor film by means of the seebeck effect
    • M.L. Trudel, Determination of the relative nitrogen doping level of tantalum nitride resistor film by means of the Seebeck effect, IEEE Trans. Parts, Hybrids, Packaging (USA), V.PHP-8 (1972) 16.
    • (1972) IEEE Trans. Parts, Hybrids, Packaging (USA), V.PHP-8 , pp. 16
    • Trudel, M.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.