메뉴 건너뛰기




Volumn 6, Issue 2, 1999, Pages 54-59

Micromachined gas sensors for environmental pollutants

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0038804000     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s005420050175     Document Type: Article
Times cited : (19)

References (8)
  • 2
    • 0003159926 scopus 로고    scopus 로고
    • New materials and heater geometry for high performance micromachined thermally insulated structures in gas sensor applications
    • Warsaw, September 1997
    • Dori L; Maccagnani P; Cardinali GC; Fiorini M; Sayago I; Guerri S; Rizzoli R; Sberveglieri G (1997) New materials and heater geometry for high performance micromachined thermally insulated structures in gas sensor applications. In Proc. of Eurosensors XI, volume 1, pages 289-292, Warsaw, September 1997
    • (1997) Proc. of Eurosensors XI , vol.1 , pp. 289-292
    • Dori, L.1    Maccagnani, P.2    Cardinali, G.C.3    Fiorini, M.4    Sayago, I.5    Guerri, S.6    Rizzoli, R.7    Sberveglieri, G.8
  • 4
    • 58149323508 scopus 로고
    • Recent developments in semiconducting film gas sensors
    • Sberveglieri G (1995) Recent developments in semiconducting film gas sensors. Sensors and Actuators B 23: 103-109
    • (1995) Sensors and Actuators B , vol.23 , pp. 103-109
    • Sberveglieri, G.1
  • 6
    • 0016597193 scopus 로고
    • The electrical properties of polycristalline silicon films
    • Seto JYW (1975) The electrical properties of polycristalline silicon films. Journal of Applied Physics 46: 5247-5254
    • (1975) Journal of Applied Physics , vol.46 , pp. 5247-5254
    • Seto, J.Y.W.1
  • 7
    • 0040771894 scopus 로고
    • The Hall effect in polycristalline and powdered semiconductors
    • Orton JW; Powell MJ (1980) The Hall effect in polycristalline and powdered semiconductors. Rep Prog Phys 43: 1265-1306
    • (1980) Rep Prog Phys , vol.43 , pp. 1265-1306
    • Orton, J.W.1    Powell, M.J.2
  • 8
    • 0027590715 scopus 로고
    • Rate equation simulation of the height of Schottky barriers at the surface of oxidic semiconductors
    • Rantala TS; Lannto V; Rantala TT (1993) Rate equation simulation of the height of Schottky barriers at the surface of oxidic semiconductors. Sensors and Actuators B 13-14: 234-237
    • (1993) Sensors and Actuators B , vol.13-14 , pp. 234-237
    • Rantala, T.S.1    Lannto, V.2    Rantala, T.T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.