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Volumn 55, Issue 2, 1999, Pages 140-146

Very low power consumption micromachined CO sensors

Author keywords

[No Author keywords available]

Indexed keywords

MICROMACHINING; SEMICONDUCTING SILICON; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR DOPING;

EID: 0032644292     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(99)00044-1     Document Type: Article
Times cited : (59)

References (12)
  • 2
    • 0003159926 scopus 로고    scopus 로고
    • New materials and heater geometry for high performance micromachined thermally insulated structures in gas sensor applications
    • Warsaw, September
    • L. Dori, P. Maccagnani, G.C. Cardinali, M. Fiorini, I. Sayago, S. Guerri, R. Rizzoli, G. Sberveglieri. New materials and heater geometry for high performance micromachined thermally insulated structures in gas sensor applications, in: Proc. Eurosensors XI, Vol. 1, Warsaw, September 1997, pp. 289-292.
    • (1997) In: Proc. Eurosensors XI , vol.1 , pp. 289-292
    • Dori, L.1    Maccagnani, P.2    Cardinali, G.C.3    Fiorini, M.4    Sayago, I.5    Guerri, S.6    Rizzoli, R.7    Sberveglieri, G.8
  • 3
    • 0030658621 scopus 로고    scopus 로고
    • Thick oxidized porous silicon layer as thermo-insulating material for high temperature operating thin and thick film gas sensors
    • Chicago, June
    • P. Maccagnani, R. Angelucci, P. Pozzi, A. Poggi, L. Dori, G.C. Cardinali, P. Negrini. Thick oxidized porous silicon layer as thermo-insulating material for high temperature operating thin and thick film gas sensors, in: Transducers 97, Vol. 1, Chicago, June 1997, pp. 213-216.
    • (1997) In: Transducers 97 , vol.1 , pp. 213-216
    • Maccagnani, P.1    Angelucci, R.2    Pozzi, P.3    Poggi, A.4    Dori, L.5    Cardinali, G.C.6    Negrini, P.7
  • 6
    • 58149323508 scopus 로고
    • Recent developments in semiconducting film gas sensors
    • Sberveglieri G. Recent developments in semiconducting film gas sensors. Sensors and Actuators B. 23:1995;103-109.
    • (1995) Sensors and Actuators B , vol.23 , pp. 103-109
    • Sberveglieri, G.1
  • 8
    • 0016597193 scopus 로고
    • The electrical properties of polycristalline silicon films
    • Seto J.Y.W. The electrical properties of polycristalline silicon films. J. Appl. Phys. 46:1975;5247-5254.
    • (1975) J. Appl. Phys. , vol.46 , pp. 5247-5254
    • Seto, J.Y.W.1
  • 9
    • 0040771894 scopus 로고
    • The Hall effect in polycristalline and powdered semiconductors
    • Orton J.W., Powell M.J. The Hall effect in polycristalline and powdered semiconductors. Rep. Prog. Phys. 43:1980;1265-1306.
    • (1980) Rep. Prog. Phys. , vol.43 , pp. 1265-1306
    • Orton, J.W.1    Powell, M.J.2
  • 10
    • 0027590715 scopus 로고
    • Rate equation simulation of the height of schottky barriers at the surface of oxidic semiconductors
    • Rantala T.S., Lannto V., Rantala T.T. Rate equation simulation of the height of schottky barriers at the surface of oxidic semiconductors. Sensors and Actuators B. 13-14:1993;234-237.
    • (1993) Sensors and Actuators B , vol.1314 , pp. 234-237
    • Rantala, T.S.1    Lannto, V.2    Rantala, T.T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.