SCOPUS 정보 검색 플랫폼

Materials Science and Engineering: B

Volumn 100, Issue 2, 2003, Pages 142-146

The characteristics of photo-CVD SiO2 and its application on SiC MIS UV photodetectors

(7) Liu, C H a Chang, C S b Chang, S J b Su, Y K b Chiou, Y Z b Liu, S H b Huang, B R c

a NAN JEON INSTITUTE OF TECHNOLOGY (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

c NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

Metal insulator semiconductor (MIS); Photo CVD; SiC; SiO2

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEUTERIUM; ELECTRIC FIELD EFFECTS; FILM PREPARATION; INDIUM COMPOUNDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PHOTOCURRENTS; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

DARK CURRENTS;

SILICA;

EID: 0038790153 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(03)00087-4 Document Type: Article

Times cited : (7)

References (12)

1
- 21544461610
- Morkoç H., Strite S., Gao G.B., Lin M.E., Sverdiov B., Burns M. J. Appl. Phys. 76:1994;1363.
- (1994) J. Appl. Phys. , vol.76 , pp. 1363
- Morkoç, H.¹ Strite, S.² Gao, G.B.³ Lin, M.E.⁴ Sverdiov, B.⁵ Burns, M.⁶

2
- 0001695017
- Campbell R.B., Chang H.C. Solid State Electron. 10:1967;949.
- (1967) Solid State Electron. , vol.10 , pp. 949
- Campbell, R.B.¹ Chang, H.C.²

3
- 0026868064
- Anikin M.M., Andreev A.N., Pyatko S.N., Savkina N.S., Strelchuk A.M., Syrkin A.L., Chelnokov V.E. Sensors Actuators. A33:1992;91.
- (1992) Sensors Actuators , vol.A33 , pp. 91
- Anikin, M.M.¹ Andreev, A.N.² Pyatko, S.N.³ Savkina, N.S.⁴ Strelchuk, A.M.⁵ Syrkin, A.L.⁶ Chelnokov, V.E.⁷

4
- 0011524746
- Hirabashi Y., Misawa S., Yoshida S. Inst. Phys. Conf. Ser. 142:1996;709.
- (1996) Inst. Phys. Conf. Ser. , vol.142 , pp. 709
- Hirabashi, Y.¹ Misawa, S.² Yoshida, S.³

5
- 0033096736
- Lipkin L.A., Palmour J.W. IEEE Trans. Electron. Dev. 46:1999;525.
- (1999) IEEE Trans. Electron. Dev. , vol.46 , pp. 525
- Lipkin, L.A.¹ Palmour, J.W.²

6
- 0000635848
- Huang C.J., Su Y.K. J. Appl. Phys. 67:1990;3350.
- (1990) J. Appl. Phys. , vol.67 , pp. 3350
- Huang, C.J.¹ Su, Y.K.²

7
- 0001505858
- Chang S.J., Su Y.K., Juang F.S., Lin C.T., Chiang C.D., Cherng Y.T. IEEE J. Quantum Electron. 36:2000;583.
- (2000) IEEE J. Quantum Electron. , vol.36 , pp. 583
- Chang, S.J.¹ Su, Y.K.² Juang, F.S.³ Lin, C.T.⁴ Chiang, C.D.⁵ Cherng, Y.T.⁶

8
- 0031076161
- Lin C.T., Su Y.K., Chang S.J., Huang H.T., Chang S.M., Sun T.P. IEEE Photo. Technol. Lett. 9:1997;232.
- (1997) IEEE Photo. Technol. Lett. , vol.9 , pp. 232
- Lin, C.T.¹ Su, Y.K.² Chang, S.J.³ Huang, H.T.⁴ Chang, S.M.⁵ Sun, T.P.⁶

9
- 0030150117
- Lin C.T., Su Y.K., Huang H.T., Chang S.J., Chen G.S., Sun T.P., Luo J.J. IEEE Photo. Technol. Lett. 8:1996;676.
- (1996) IEEE Photo. Technol. Lett. , vol.8 , pp. 676
- Lin, C.T.¹ Su, Y.K.² Huang, H.T.³ Chang, S.J.⁴ Chen, G.S.⁵ Sun, T.P.⁶ Luo, J.J.⁷

10
- 0029197067
- Lin C.T., Chang S.J., Nayak D.K., Shiraki Y. Jpn J. Appl. Phys. 34:1995;72.
- (1995) Jpn J. Appl. Phys. , vol.34 , pp. 72
- Lin, C.T.¹ Chang, S.J.² Nayak, D.K.³ Shiraki, Y.⁴

11
- 3342905713
- Itoh U., Toyoshima Y., Onuki H., Washida N., Ibuki T. J. Chem. Phys. 85:1986;4867.
- (1986) J. Chem. Phys. , vol.85 , pp. 4867
- Itoh, U.¹ Toyoshima, Y.² Onuki, H.³ Washida, N.⁴ Ibuki, T.⁵

12
- 0003610719
- New Jersey: Artech House. chapter 8
- Nicollian E.H., Brews J.R. MOS (Metal Oxide Semiconductor) Physics and Technology. 1982;Artech House, New Jersey. chapter 8.
- (1982) MOS (Metal Oxide Semiconductor) Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.