메뉴 건너뛰기




Volumn 5, Issue 6, 2002, Pages 519-524

Direct bonding of Si wafer pairs with SiO2 and Si3N4 films with a fast linear annealing

Author keywords

Bonding of Si wafer pairs with SiO2 and Si3N4 films (Si SiO2 Si3N4 Si); Direct bonding; Fast linear annealing; Heterogeneous bonding

Indexed keywords

ANNEALING; CHEMICAL BONDS; SILICON COMPOUNDS;

EID: 0038756027     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00059-8     Document Type: Article
Times cited : (1)

References (15)
  • 2
    • 0023043012 scopus 로고
    • Wafer bonding for silicon-on-insulator technologies
    • Lasky J.B. Wafer bonding for silicon-on-insulator technologies. Appl Phys Lett. 48:1986;78.
    • (1986) Appl Phys Lett , vol.48 , pp. 78
    • Lasky, J.B.1
  • 4
    • 0001159302 scopus 로고
    • Bubble-free wafer bonding of GaAs and InP on silicon in a microcleanroom
    • Lehmann V., Mitani K., Stengl R., Mii T., Goesele U. Bubble-free wafer bonding of GaAs and InP on silicon in a microcleanroom. Jpn J Appl Phys. 28(12):1989;L2141.
    • (1989) Jpn J Appl Phys , vol.28 , Issue.12 , pp. 2141
    • Lehmann, V.1    Mitani, K.2    Stengl, R.3    Mii, T.4    Goesele, U.5
  • 5
    • 0000472026 scopus 로고    scopus 로고
    • Smart-cut: A new silicon on insulator material technology based on hydrogen implantation and wafer Bonding
    • Bruel M., Aspar B., Auberton-Herve A.J. Smart-cut. a new silicon on insulator material technology based on hydrogen implantation and wafer Bonding Jpn J Appl Phys. 36:1997;1636.
    • (1997) Jpn J Appl Phys , vol.36 , pp. 1636
    • Bruel, M.1    Aspar, B.2    Auberton-Herve, A.J.3
  • 8
    • 0037980911 scopus 로고    scopus 로고
    • Effect of moving velocity of the heat source on bonding strength in the direct silicon wafer using linear annealing method
    • Joo Y.C., Lee J.W., Song O.S., Joo Y.C., Kang C.S. Effect of moving velocity of the heat source on bonding strength in the direct silicon wafer using linear annealing method. J Korean Inst Met Mater. 39(1):2001;110.
    • (2001) J Korean Inst Met Mater , vol.39 , Issue.1 , pp. 110
    • Joo, Y.C.1    Lee, J.W.2    Song, O.S.3    Joo, Y.C.4    Kang, C.S.5
  • 9
    • 0035439352 scopus 로고    scopus 로고
    • Interferometry of actuated microcantilevers to determine material properties and test structure nonidealities in MEMS
    • Jensen B.D., de Boer M.P., Masters N.D., Bitsie F., LaVan D.A. Interferometry of actuated microcantilevers to determine material properties and test structure nonidealities in MEMS. J Micro Syst. 10:2001;336.
    • (2001) J Micro Syst , vol.10 , pp. 336
    • Jensen, B.D.1    De Boer, M.P.2    Masters, N.D.3    Bitsie, F.4    LaVan, D.A.5
  • 10
  • 13
    • 0030737147 scopus 로고    scopus 로고
    • The crack opening method in silicon wafer bonding. How useful is it?
    • Martini T., Steinkirchner J., Gosele U. The crack opening method in silicon wafer bonding. How useful is it? J Electrochem Soc. 144(1):1997;354.
    • (1997) J Electrochem Soc , vol.144 , Issue.1 , pp. 354
    • Martini, T.1    Steinkirchner, J.2    Gosele, U.3
  • 15
    • 0344115256 scopus 로고
    • Silicone wafer bonding mechanism for silicon-on-insulator structures
    • Abe T., Takei T., Uchiyama A., Yoshizawa K., Nakazato Y. Silicone wafer bonding mechanism for silicon-on-insulator structures. Jpn J Appl Phys. 29(12):1990;L2311.
    • (1990) Jpn J Appl Phys , vol.29 , Issue.12 , pp. 2311
    • Abe, T.1    Takei, T.2    Uchiyama, A.3    Yoshizawa, K.4    Nakazato, Y.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.