Influence of argon gas pressure on the crystallinity of α-SiC epitaxial films fabricated by Nd:YAG pulsed-laser deposition

Optical Materials

Volumn 23, Issue 1-2, 2003, Pages 55-60

  Kusumori, Takeshi ^a   Muto, Hachizo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Hetero epitaxy; Pulsed laser deposition; RHEED; SiC; X ray diffraction

Indexed keywords

ARGON; CRYSTALLINE MATERIALS; CRYSTALLIZATION; EPITAXIAL GROWTH; NEODYMIUM LASERS; PRESSURE EFFECTS; PULSED LASER DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE FILMS;

SEMICONDUCTING FILMS;

EID: 0038746754     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(03)00059-4     Document Type: Conference Paper

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