Low-temperature preparation of α-SiC epitaxial films by Nd: YAG pulsed-laser deposition

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 375-378

  Kusumori, Takeshi ^a   Muto, Hachizo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Heteroepitaxy; Pulsed laser deposition; RHEED; SiC thin film; Scan X ray diffraction

Indexed keywords

EPITAXIAL GROWTH; LOW TEMPERATURE PRODUCTION; PULSED LASER DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SILICON CARBIDE; EPITAXIAL FILMS; FILM GROWTH; FILM PREPARATION; NEODYMIUM LASERS; PULSED LASERS; SUBSTRATES; TEMPERATURE; X RAY DIFFRACTION; YTTRIUM ALUMINUM GARNET;

C-AXIS ORIENTATION; LATTICE MATCHING; LOW-TEMPERATURE PREPARATION; PN JUNCTIONS; SCAN X-RAY DIFFRACTION; C-AXIS ORIENTATIONS; IN-PLANE ORIENTATION; LOW SUBSTRATE TEMPERATURE; LOW TEMPERATURE PREPARATION; ND:YAG PULSED LASER; RELATIVE ROTATION; SAPPHIRE SUBSTRATES; SIC THIN FILMS;

EPITAXIAL FILMS; EPITAXIAL GROWTH;

EID: 0037672045     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.375     Document Type: Article

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