Novel thin film solar cell model with two antipolar MIS structures

Solar Energy Materials and Solar Cells

Volumn 56, Issue 1, 1998, Pages 67-74

  Konig D ^a   Ebest, G ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Novel device; Simulation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRODES; ENERGY CONVERSION; MIS DEVICES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; THIN FILM DEVICES; TRANSPARENCY;

INDIUM TIN OXIDE; LOW-TEMPERATURE CHEMICAL VAPOR DEPOSITION;

SOLAR CELLS;

EID: 0032317660     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(98)00126-3     Document Type: Article

References (6)

1. H. Gajewski et al. ToSCA (Two Dimensional Semi-Conductor Analysis Package), manual (specified for ToSCA in compound with DIOS), specification: U. Todt, 1993.
2. S. Selberherr, Analysis and Simulation of Semiconductor Devices, , Springer, New York, 1984.
3. H.C. Card, E.S. Yang, Electronic processes at grain boundaries in polycrystalline semiconductors under optical illuminations, IEEE Trans. Electron. Devices 24 (4) (1977) 397.
4. C.A. Dimitriadis, D.H. Tassis, On the threshold voltage and channel conductance of polycrystalline silicon thin-film transistors, J. Applied Physics 97 (8) (1996) 4431.
5. D. König, T. Otto, G. Ebest, New approach to a Thin Film Poly Silicon Solar Cell (TFPSSC) starting from an MIS solar cell, to be published.
6. D. König, T. Otto, G. Ebest, On the contactation of and electron current flow through the n-inversion layer of the thin film poly silicon solar cell (TFPSSC), to be published.