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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2408-2411

Structural analysis of bismuth nanowire by X-ray standing wave method

(7) Saito, Akira a,b Matoba, Kenji a Kurata, Tomoki a Maruyama, Junpei a Kuwahara, Yuji a,b Miki, Kazushi c,d Aono, Masakazu a,c

a OSAKA UNIVERSITY (Japan)

b RIKEN HARIMA INSTITUTE (Japan)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

Bismuth; Interface; Nanowire; Synchrotron radiation; X ray standing wave

Indexed keywords

AMORPHOUS SILICON; ATOMIC PHYSICS; CRYSTAL LATTICES; DEFECTS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; SURFACE STRUCTURE; X RAY SCATTERING;

ATOMIC SITE; INTERNAL STRUCTURE; NANOWIRE; SURYING EFFECT; WIRE STRUCTURE; X RAY STANDING WAVE METHOD;

BISMUTH;

EID: 0038682517 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.2408 Document Type: Article

Times cited : (11)

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