Improvement of NLD mask dry etching system for 100nm node technology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4889, Issue 1, 2002, Pages 619-625

  Tanaka, Yoshiyuki ^a   Yoshioka, Nobuyuki ^a   Harashima, Noriyuki ^b   Sasaki, Takaei ^b   Kuwahara, Kiyoshi ^b   Hayashi, Toshio ^b   Hara, Mutsumi ^c   Ohkubo, Yasushi ^c  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b ULVAC INC   (Japan)

^c HOYA CORPORATION   (Japan)

Author keywords

CD uniformity; Loading effect; Mask dry etching; NLD plasma

Indexed keywords

ELECTRODES; LITHOGRAPHY; MASKS; PLASMA DENSITY;

LOADING EFFECTS;

DRY ETCHING;

EID: 0038642119     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.467914     Document Type: Conference Paper

References (3)

1. T. Fujisawa, N. Yoshioka, T. Sasaki, and K. Yamashiro, "Improvement of NLD mask dry etching system", Proc., Photomask and Next-Generation lithography Mask Technology VIII, SPIE Vol. 4409 (2001), pp390-395
2. H. Shindo, T. Urayama, T. Fujii, Y. Horiike, and S. Fujii, "Electron energy control in an inductively coupled plasma at low pressures", Applied Physics Letters, Vol. 76 (2000), pp1246-1248
3. S. Samukawa and K. Terada, "Pulse-time modulated electron cyclotron resonance plasma etching for highly selective, highly anisotropic, and less-charging polycrystalline silicon patterning", J. Vac. Sci. Technol. B, Vol. 12, No. 6 (1994), pp3300-3305