Improvement of NLD mask dry etching system

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4409, Issue 1, 2001, Pages 390-395

  Fujisawa, Tatsuya ^a   Yoshioka, Nobuyuki ^a   Sasaki, Takaei ^b   Yamashiro, Kazuhide ^c  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b ULVAC INC   (Japan)

^c HOYA CORPORATION   (Japan)

Author keywords

CD uniformity; Mask dry etching; NLD plasma

Indexed keywords

MAGNETIC CORES; MASKS; PHOTOLITHOGRAPHY; PLASMA DENSITY;

NEUTRAL LOOP DIAMETER; PLASMA DISTRIBUTION;

DRY ETCHING;

EID: 0035191809     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.438356     Document Type: Article

References (6)

1. Plasma etch of AZ5206/Cr and ZEP7000/Cr for 0.18-0.25um generation advanced mask fabrication
2. Comparison of etching methods for sub-quarter micron rule mask fabrication
3. Application of dry etching process on high-end Cr photomasks
4. Advanced Cr dry etching process
5. Plasma etch of binary Cr masks: CD uniformity study of photomasks utilizing varying Cr loads
6. Evaluation of loading effect of NLD dry etching