Aerial image-based inspection of binary (OPC) and embedded-attenuated PSM

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4889, Issue 2, 2002, Pages 1010-1017

  Chang, Felix ^a   Hung, Johnson C C ^a   Lin, John C H ^a   Rosenbusch, Anja ^b   Falah, Reuven ^c   Hemar, Shirley ^c  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b Applied Materials Inc Israel   (Israel)

^c NONE   (United States)

Author keywords

193 nm technology; Aerial image based mask inspection; EAPSM

Indexed keywords

ATTENUATION; IMAGE ANALYSIS; INSPECTION; LITHOGRAPHY;

AERIAL IMAGING;

MASKS;

EID: 0038642018     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.467767     Document Type: Conference Paper

References (4)

1. V. Philipsen, R. M. Jonkheere, S. Kohlpoth, A. Torres, "Defect printability for 100-nm design rule using 193nm lithography", SPIE 4754, pp. 639-650, 2002
2. J. W. Novak, B. Enyon, A. Rosenbusch, A. Goldenshtein "Defect dispositioning using mask printability on attenuated phase-shift production photomasks", SPIE 4409, pp. 488-498, 2001
3. L. Karklin, M. M. Altamirano, L. Cai, K. A. Phan, C. Spence, "Automatic defect severity scoring for 193-nm reticle defect inspection", SPIE 4346, pp. 898-906, 2001
4. M. McCallum, "Wavelength dependant mask defect inspection and printing", SPIE 4562, pp. 496-502, 2001