Study of dark field EUVL mask for 45nm technology node poly layer printing

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4889, Issue 2, 2002, Pages 1106-1112

  Yan, Pei Yang ^a  

^a INTEL CORPORATION   (United States)

Author keywords

45 nm technology node; Dark field EUVL mask; EUV lithography; EUVL mask

Indexed keywords

AERIAL PHOTOGRAPHY; LITHOGRAPHY; OPTICAL RESOLVING POWER; PRINTING;

POLY LAYER PRINTING;

MASKS;

LITHOGRAPHY; MASKING; PRINTING; RESOLUTION;

EID: 0038642003     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.468101     Document Type: Conference Paper

References (4)

1. C. Krautschik, M. Ito, I. Nishiyama, Otaki, "The Impact of the EUV Mask Phase Response on the Asymmetry of Bossung Curves as Predicted by Rigorous EUV Mask Simulations," SPIE Vol. 4343, pp 392,2001.
2. P. Y. Yan, "Understanding Bossung Curve Asymmetry and Focus Shift Effect in EUVL Lithography," SPIE Vol. 4562, pp 279, 2002.
3. P. Y. Yan, "The Impact of EUVL Mask Buffer and Absorber Material Properties on Mask Quality and Performance," SPIE Vol. 4688, Emerging Lithographic Technologies, pp150, 2002.
4. http://www-cxro.lbl.gov/optical_constants.