The growth of the CdxZn1-xTe epilayers by low-pressure metalorganic vapor-phase epitaxy

Thin Solid Films

Volumn 429, Issue 1-2, 2003, Pages 211-215

  Zhang, Z Z ^a   Shen, D Z ^a   Shan, C X ^a   Zhang, J Y ^a   Lu, Y M ^a   Liu, Y C ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

Cd content; CdxZn1 xTe epilayer; Metalorganic vapor phase epitaxy; Substrate temperature

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

SUBSTRATE TEMPERATURE;

CADMIUM COMPOUNDS;

EID: 0038636426     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00145-7     Document Type: Article

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