MOVPE growth of (100) CdZnTe layers using DiPZn

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 121-125

  Yasuda, K ^a   Minamide, M ^a   Kawamoto, K ^a   Maejima, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL LATTICES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; ZINC;

DIETHYLTELLURIDE; DIISOPROPYLZINC; DIMETHYLCADMIUM; LATTICE MATCH; PRECURSORS;

EPITAXIAL GROWTH;

EID: 0030562321     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00638-9     Document Type: Article

References (9)

1. W.L. Ahlgren, S.M. Johnson, E.J. Smith, R.P. Ruth, B.C. Johnston, M.H. Kalisher C.A. Cocrum, T.W. James and D.L. Arney, J. Vac. Sci. Technol. A 7 (1989) 331.
2. D.W. Kisker, J. Crystal Growth 98 (1989) 127.
3. L. Sugiura, K. Shigenaka, F. Nakata and K. Hirahara, J. Crystal Growth 145 (1994) 547.
4. L. Sugiura, K. Shigenaka, F. Nakata and K. Hirahara, Jpn. J. Appl. Phys. 32 (1993) 669.
5. K. Yasuda, M. Ohno, J. Yamaguchi, T. Onakado, T. Ferid and H. Hatano, Extended Abstracts 1993 US Workshop on the Physics and Chemistry of HgCdTe (Seattle, 1993) p. 27.
6. K. Yasuda, S. Sone, M. Ekawa, Y. Sugiura, N. Matsui, A. Tanaka and M. Saji, Tech. Digest 1st Int. Meeting Advanced Proc. Character. Technol. (APCT'89) (Tokyo, 1989) p. 131.
7. S. Sone, M. Ekawa, K. Yasuda, Y. Sugiura and A. Tanaka, Appl. Phys. Lett. 56 (1990) 539.
8. G.B. Stringfellow, Organometallic Vapor-Phase Epitaxy (Academic Press, Boston, 1989) ch. 2, p. 26.
9. I.B. Bhat, N.R. Taskar and S.K. Ghandhi, J. Electrochem. Soc. 134 (1987) 196.