Growth and evaluation of Cd1-yZny Te epilayers on (100) GaAs substrates by hot wall epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 10, 1998, Pages 5674-5679

  Koo, Bonheun ^a   Wang, Jifeng ^a   Ishikawa, Yukio ^a   Isshiki, Minoru ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Cd reservoir; Cd1 yZnyTe (y = 0.2) source; Cd1 yZnyTe (y 0.045) GaAs; Hot wall epitaxy; Phase separation; Photoluminescence; Tour crystal X ray diffraction

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; PHASE SEPARATION; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

HOT WALL EPITAXY (HWE);

SEMICONDUCTING FILMS;

EID: 0032179263     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5674     Document Type: Review

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