Formation of radiation-induced point defects in silicon doped thin films upon ion implantation and activating annealing

Crystallography Reports

Volumn 44, Issue 6, 1999, Pages 1035-1041

  Bublik, V T ^a   Shcherbachev, K D ^a   Komarnitskaya, E A ^a   Parkhomenko, Yu N ^a   Vygovskaya, E A ^a   Evgen'ev, S B ^b  

^a NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

^b MIREA RUSSIAN TECHNOLOGICAL UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033236701     PISSN: 10637745     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. Bublik, V.T., Evgen'ev, S.B., Kalinin, A.A., Mil'vidskii, M.G., Nemirovskii, A.V., and Ufimtsev, V.B., Kristallografiya, 1997, vol. 42, no. 2, pp. 360-363.
2. Chtcherbatchev, K.D. and Bublik, V.T., Institute of Physics, Conference Series, 1997, no. 160, pp. 187-190.
3. Wie, C.R., Tombrello, T.A., and Vreeland, T., J. Appl. Phys., 1986, vol. 59, no. 11, pp. 3743-3746.
4. Bublik, V.T. and Mil'vidskii, M.G., Materiallovedenie, 1997, no. 1, pp. 21-29.
5. Ziegler, J.V. and Biersack, J.P., The Stopping and Range of Ions in Solids, New York: Pergamon, 1985.
6. Reyhaud, F. and Legres de Mauduit, B., Radiat. Eff. Defects Solids, 1996, vol. 88, no. 1/2, pp. 1-16.
7. Willis, J.P., Bullough, R., and Stoneham, A.M., Philos. Mag. A, 1983, vol. 48, no. 1, pp 95-107.
8. Bublik, V.T., Evgen'ev, S.B., Kalinin, A.A., and Milvidskii, M.G., Kristallografiya, 1995, vol. 40, no. 1, pp. 128-136.