Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films

Microelectronics Journal

Volumn 34, Issue 5-8, 2003, Pages 375-378

  Cerqueira, M F ^a   Stepikhova, M ^b   Losurdo, M ^c   Giangregorio, M M ^c   Alves, E ^d   Monteiro, T ^e   Soares, M J ^e   Boemare, C ^e  

^a UNIVERSITY OF MINHO   (Portugal)

^b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^c CNR   (Italy)

^d INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^e UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

Nanocrystalline silicon; Spectroscopic ellipsometry; X ray diffractometry

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY; ELLIPSOMETRY; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; X RAY DIFFRACTION ANALYSIS;

SPECTROSCOPIC ELLIPSOMETRY;

THIN FILMS;

EID: 0038581697     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00028-4     Document Type: Conference Paper

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