High single-mode yield 1.55 μm GaInAsP/InP BH-DFB lasers with periodic wirelike active regions

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2000, Pages 45-46

  Nunoya, N ^a   Morshed, M ^a   Nakamura, M ^a   Tamura, S ^a   Arai, S ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM EFFICIENCY; QUANTUM WELL LASERS; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

GAIN MATCHING EFFECT; SINGLE TRANSVERSE MODE;

DISTRIBUTED FEEDBACK LASERS;

EID: 0034471319     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)