Transient and quasi-stationary simulation of heat and mass transfer in Czochralski silicon crystal growth

Crystal Research and Technology

Volumn 38, Issue 6, 2003, Pages 499-505

  Voigt, A ^a   Weichmann, C ^a   Nitschkowski, J ^a   Dornberger, E ^b   Holz R ^b  

^a CENTER OF ADVANCED EUROPEAN STUDIES AND RESEARCH CAESAR   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

Czochralski method; Defects; Diffusion; Heat transfer; Point defects; Semiconducting silicon

Indexed keywords

COMPUTER SIMULATION; HEAT TRANSFER; MASS TRANSFER; SILICON; SOLIDIFICATION; THERMAL GRADIENTS;

STEADY STATE CONDITION;

CRYSTAL GROWTH FROM MELT;

EID: 0038548573     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200310063     Document Type: Article

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