Critical issues in the formation of atomic arrays of phosphorus in silicon for the fabrication of a solid-state quantum computer

Surface Science

Volumn 532-535, Issue , 2003, Pages 678-684

  Curson, N J ^a   Schofield, S R ^a   Simmons, M Y ^a   Oberbeck, L ^a   Clark, R G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Adsorption kinetics; Auger electron spectroscopy; Phosphine; Scanning tunneling microscopy; Silicon; Solid gas interfaces; Surface diffusion; Surface structure, morphology, roughness, and topography

Indexed keywords

ADSORPTION; AUGER ELECTRON SPECTROSCOPY; INTERFACES (MATERIALS); LITHOGRAPHY; MOLECULAR BEAM EPITAXY; QUANTUM ELECTRONICS; SCANNING TUNNELING MICROSCOPY; SILICON; SOLID STATE DEVICES;

ADSORPTION KINETICS;

PHOSPHORUS;

EID: 0038522553     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00206-1     Document Type: Conference Paper

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