Development of gold-doped Hg0.79Cd0.21Te for very-long-wavelength infrared detectors

Applied Physics Letters

Volumn 82, Issue 23, 2003, Pages 4157-4159

  Shih, H D ^a   Kinch, M A ^a   Aqariden, F ^a   Liao, P K ^a   Schaake, H F ^a   Nathan, M ^b  

^a DRS Sensors and Targeting Systems Inc   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EPITAXIAL GROWTH; ETCHING; GOLD; INFRARED DETECTORS; INTEGRATED CIRCUITS; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; PHOTODIODES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; STRENGTH OF MATERIALS; TERNARY SYSTEMS;

INFRARED FOCAL PLANE ARRAYS (IRFPA);

MERCURY COMPOUNDS;

EID: 0038505038     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1581369     Document Type: Article

References (6)

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4. T. A. Temofonte, A. J. Norieka, M. J. Bevan, P. R. Emtage, C. E. Seiler, and P. Mitra, J. Vac. Sci. Technol. A 7, 440 (1989).
5. M. J. Hyliands, J. Thompson, M. J. Bevan, K. T. Woodhouse, and V. Vincent, J. Vac. Sci. Technol. A 4, 2217 (1986).
6. T. T. S. Wong, M.S. Thesis, Massachusetts Institute of Technology. Cambridge. MA. 1974.