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Materials Research Society Symposium - Proceedings

Volumn 737, Issue , 2003, Pages 449-454

Electrical properties of thin nitrogen-doped ultrananocrystalline diamond films

(5) Polyakov, V I a Rukovishnikov, A I a Pimenov, S M b Carlisle, J A c Gruen, D M c

a INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS (Russian Federation)

b PROKHOROV GENERAL PHYSICS INSTITUTE (Russian Federation)

c ARGONNE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC PROPERTIES; IONIC CONDUCTION; NANOSTRUCTURED MATERIALS; NITROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

CHARGE BASED DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON CONDUCTIVITY; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION; THIN NITROGEN DOPED ULTRANANOCRYSTALLINE DIAMOND FILMS;

DIAMOND FILMS;

EID: 0038488100 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (1)

References (12)

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