Ultrafast recovery times and increased absorption nonlinearity in InGaAsP MQW saturable absorbers implanted at 200°C

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 355-358

  Pantouvaki, M ^a   Gwilliam, R ^b   Burr, E P ^a   Krysa, A B ^c   Roberts, J S ^c   Seeds, A J ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ION IMPLANTATION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; ABSORPTION; DISTRIBUTED BRAGG REFLECTORS; INDIUM; INDIUM PHOSPHIDE; NONLINEAR OPTICS; SATURABLE ABSORBERS; SUBSTRATES; SYNTHETIC APERTURE SONAR; SYNTHETIC APERTURES;

HIGH TEMPERATURE IMPLANTATION; SEMICONDUCTOR SATURABLE ABSORBERS;

SEMICONDUCTOR QUANTUM WELLS;

ABSORPTION MODULATION; ABSORPTION RECOVERY; DYNAMIC ANNEALING; HIGH-TEMPERATURE IMPLANTATION; NONLINEAR OPTICAL DEVICES; PLASMA TEMPERATURE; QUANTUM WELL DEVICE; ULTRAFAST OPTICS;

EID: 0038487205     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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