Effects of transparent Pt metal layer on performance of InGaN/GaN multiple-quantum well light-emitting diodes

Electrochemical and Solid-State Letters

Volumn 6, Issue 6, 2003, Pages

  Huh, Chul ^a   Schaff, William J ^a   Eastman, Lester F ^a   Park, Seong Ju ^b  

^a Cornell University   (United States)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; PLATINUM; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ELECTRICAL PERFORMANCE; OPTICAL PERFORMANCE; THICKNESS DEPENDENCE; TRANSPARENT PLATINUM LAYER;

LIGHT EMITTING DIODES;

EID: 0038476164     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1567535     Document Type: Article

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