Reactive ion etching of Pt electrode using O2-based plasma

Vacuum

Volumn 71, Issue 4, 2003, Pages 491-496

  Kim, Hyoun Woo ^a   Kang, Chang Jin ^b  

^a Inha University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

CD; Etching; Pt; RIE

Indexed keywords

ION BOMBARDMENT; OXYGEN; PLASMA APPLICATIONS; REACTIVE ION ETCHING;

OPTIMAL GAS FLOW;

PLATINUM;

EID: 0038452696     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(03)00074-5     Document Type: Article

References (6)

1. Saito S., Juramasu K. Jpn J Appl Phys 1. 31:1992;135.
2. Nishikawa K., Kusumi Y., Oomori T., Hanazaki M., Namba K. Jpn J Appl Phys. 32:1993;6102.
3. Yokoyama S., Ito Y., Ishihara K., Hamada K., Ohnishi S., Kudo J., Sakiyama K. Jpn J Appl Phys. 34:1995;767.
4. Yoo W.J., Hahm J.H., Kim H.W., Jung C.O., Koh Y.B., Lee M.Y. Jpn J Appl Phys 1. 35:1996;2501-2504.
5. Eimori T., Ono Y., Ito H. Nikkei Microdevices. 2:1994;99.
6. Kim H.W., Ju B.S., Nam B.Y., Yoo W.J., Kang C.J., Ahn T.H., Moon J.T., Lee M.Y. J Vac Sci Technol A. 17:1999;2151-2155.