CONVECTIVE INSTABILITY IN CRYSTAL GROWTH SYSTEM

Annual Review of Heat Transfer

Volumn 12, Issue , 2002, Pages 187-221

  Imaishi, Nobuyuki ^a   Kakimoto, Koichi ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; MAGNETIC FIELDS; MASS TRANSFER; SILICON COMPOUNDS;

CONVECTIVE INSTABILITIES; DEFECT AND IMPURITIES; DEFECT CONCENTRATIONS; GROWN FROM THE MELTS; GROWTH SYSTEMS; HEAT AND MASS TRANSFER; IMPURITIES CONCENTRATION; LARGE CRYSTAL; OXIDE MELTS; SEMICONDUCTOR MELTS;

STABILITY;

EID: 0038443829     PISSN: 10490787     EISSN: 23750294     Source Type: Book Series    
DOI: 10.1615/AnnualRevHeatTransfer.v12.70     Document Type: Chapter

References (54)

1. 2 on Czochralski Silicon, J. Appi. Phys., Vol. 78, pp. 5984-5988, 1995.
2. R. A. Brown, Theory of Transport Processes in Single Crystal Growth from the Melt, AlChE Journal, Vol. 34, pp. 881-911, 1988.
3. F. Dupret, Y. Ryckmans, P. Wouters, and M. J. Crochet, Numerical Calculation of the Global Heat Transfer in a Czochralski Furnace, J. Crystal Growth, Vol. 79, pp. 84-91, 1986.
4. J. J. Derby and R. A. Brown, On the Dynamics of CZ Crystal Growth, J. Crystal Growth, Vol. 83, pp. 137-152,1987.
5. G. Meuller, Convection and Inhomogenieties in Crystal Growth from the Melt, J. Crystal Growth, Vol. 12, pp. 1-32, 1988.
6. D. T. J. Hurle, Convective Transfer in Melt Growth Systems, J. Crystal Growth, Vol. 65, pp. 124-132,1983.
7. G. Meuller, G. Neumann, and H. Matz, A Two-Raleigh-Number Model of Buoyancy-Driven Convection in Vertical Melt Growth Configuration, /. Crystal Growth, Vol. 84, pp. 36-49, 1987.
8. K. Kakimoto, M. Watanabe, H. Watanabe, and T. Hibiya, Natural and Forced Convection of Molten Silicon During Czochralski Single Crystal Growth, / Crystal Growth, Vol. 94, pp. 412-420, 1994.
9. Y. Kishida, M. Tanaka, and H. Esaka, Appearance of a Baroclinic Wave in Czochralski Silicon Melt, J. Crystal Growth, Vol. 130, pp. 75-84, 1993.
10. A. D. W. Jones, Spoke Pattern, J. Crystal Growth, Vol. 63, pp. 70-76, 1983.
11. K. Kakimoto, M. Eguchi, H. Watanabe, and T. Hibiya, In Situ Observation of Molten Silicon Convection, / Crystal Growth, Vol. 88, pp. 365-372,1988.
12. K.-W. Yi and K. Kakimoto, Spoke Pattern in Silicon Melt, J. Crystal Growth, Vol. 144, pp. 20-28, 1994.
13. G. Meuller, Convection in Crystal Growth, Handbook of Crystal Growth, North-Holland, Vol. 2B, pp. 709-819, 1994.
14. R. J. R. Ristorcelli and J. L. Lumley, Convective instability in silicon melt, J. Crystal Growth, Vol. 116, pp. 447-452, 1992.
15. M. Mihelcic, Flow in Czochralski Crystal Growth Melts, Berichte des Forschungszentrums Jülich; 2697 ISSN 0366-0885, Institute fur Festkoerperforschung, Jul-2697, 1992.
16. M. Watanabe, K. Kakimoto, M. Eguchi, and T. Hibiya, The Baroclinic Flow Instability in Rotating Silicon Melt, J. Crystal Growth, Vol. 128, pp. 288-292, 1993.
17. P. C. Drazin and W. H. Reid, Hydrodynamic Stability, Cambridge University Press, pp. 333-339,1981.
18. H. Hirata and K. Hoshikawa, Homogeneous Increase in Oxygen Concentration in Czochralski Silicon-Crystals by a Cusp Magnetic Field, /. Crystal Growth, Vol. 98, pp. 777-781,1989.
19. H. Hirata and K. Hoshikawa, 3-Dimensional Numerical-Analyses of the Effects of a Cusp Magnetic-Field on the flows, Oxygen-Transport and Heat-Transfer in a Homogeneous Increase in Oxygen Concentration in Czochralski Silicon Melt, / Crystal Growth, Vol. 125, pp. 181-207, 1992.
20. K. Kakimoto, M. Eguchi, and H. Ozoe, Use of an Inhomogeneous Magnetic Field for Silicon Crystal Growth, J. Crystal Growth, Vol. 180, pp. 442-449, 181-207,1997.
21. K. Kakimoto, K.-W. Yi, and M. Eguchi, Oxygen Transport Mechanism in Si Melt During Single Crystal Growth in the Czochralski System, J. Crystal Growth, Vol. 165, pp. 358-361, 1996.
22. K. Kakimoto and K.-W. Y i, Use of Magnetic Fields in Crystal Growth from Semiconductor Melts, Physica B, Vol. 216, pp. 406-408,1996.
23. K.-W. Y i, M. Watanabe, M. Eguchi and K. Kakimoto, Change in Velocity in Silicon Melt of the Czochralski Process in a Vertical Magnetic-Field, Jpn. J. Appi. Phys., Vol. 33, pp. L487-L490,1994.
24. M. Watanabe, K.-W. Y i, T. Hibiya, and K. Kakimoto, Direct Observation and Numerical Simulation of Molten Silicon Flow During Crystal Growth under Magnetic Fields by X-Ray Radiography and Large-Scale Computation, Progress of Crystal Growth, Ch. 38, pp. 215-238, 1999.
25. K. Kakimoto and H. Ozoe, Oxygen Distribution at a Solid-Liquid Interface of Silicon Under Transverse Magnetic Fields, J. Crystal Growth, Vol. 212, pp. 429-437,2000.
26. H. J. Leister and M. Peric, Numerical Simulation of a 3D Czochralski-Melt Flow by a Finite Volume Multigrid-Algorithm, J. Crystal Growth, Vol. 123, pp. 567-574,1992.
27. Q. Xiao and J. J. Derby, 3-Ddimensional Melt Flows in Czochralski Oxide-Growth - High-Resolution, Massively-Parallel, Finite-Element Computations, J. Crystal Growth, Vol. 152, pp. 169-181 (1995)
28. J. C. Rojo and J. J. Derby, On the Formation of Rotational Spoke Patterns During the Czochralski Growth of Bismuth Silicon Oxide, J. Crystal Growth, Vol. 199, pp. 154-160, 1999.
29. C. J. Jing, S. Yasuhiro, H. Suenaga, T. Sato, and N. Imaishi, Thermal Science and Engineering, Vol. 8, pp. 1-8, 2000.
30. T. Munakata and I. Tanasawa, Onset of Oscillatory Flow in a Czochralski Growth Melt and its Suppression by Magnetic Field, J. Crystal Growth, Vol. 106, pp. 566-576,1990.
31. T. Yamauchi, G. Mika, and K. Suzuki, Three Dimensional Numerical Simulation of Melt Flow and its Thermal Characteristics in Cz Crucible, Proc. 36th Japan Heat Transfer Symposium, C142, pp. 75-76, 1999.
32. Y. S. Lee and Ch.-H. Chun, Prandtl Number Effect on Traveling Thermal Waves Occurring in Czochralski Crystal Growth, Adv. Space Res., Vol. 24, pp. 1403-1407, 1999.
33. C. J. Jing, N. Imaishi, T. Sato, and Y. Miyazawa, Three-Dimensional Numerical Simulation of Oxide Melt Flow in Czochralski Configuration, J. Crystal Growth, in press.
34. T. Tsukada, N. Imaishi, and M. Hozawa, Theoretical Study of the Flow and Temperature Fields in CZ Single Crystal Growth, / Chem. Eng. Jpn., Vol. 21, pp. 184-191, 1988.
35. T. Tsukada, M. Hozawa, and N. Imaishi, Global Analysis of Heat-Transfer in Cz Crystal-Growth of Oxide, J. Chem. Eng. Jpn., Vol. 27, pp. 25-31, 1994.
36. C. J. Jing, N. Imaishi, S. Yasuhiro, and Y Miyazawa, Three-Dimensional Numerical Simulation of Spoke Pattern in Oxide Melt, J. Crystal growth, Vol. 200, pp. 204-212, 1999.
37. M. Higano, Thermal Instability of Liquid Layer, Part 1, Marangoni Instability, Trans. JSME, Vol. 47(413), pp. 105-110,1981.
38. T. Boeck and A. Thess, Inertial Benard-Marangoni Convection, J. Fluid Mech., Vol. 350, pp. 149-175,1997.
39. J. S. Szmyd, M. Jaszczur, H. Ozoe, and K. Kakimoto, Numerical Analysis of Buoyancy Driven Convection and Radiation from the Free Surface of the Fluid in a Vertical Cylinder, Proc. 3rd Europ. Thermal Sci. Conf. (Heidelberg, Sepot. 2000), in press.
40. V. Nikolov, K. Iliev, and P. Peshev, Relationship between the Hydrodynamics in the Melt and the Shape of the Crystal/Melt Interface During Czochralski Growth of Oxide Single Crystals, I. Determination of the Critical Crystal Rotation Rate from Physical Simulation Data on Free and Forced convection, J. Crystal Growth, Vol. 89, pp. 313-323, 1988.
41. K. Iliev, M. Berkowski, V. Nikolov, P. Peshev, and W. Piekarczyk, Conditions of Existence and character of the Temperature-Fluctuations during Czochralski Growth of Oxide Single Crystals, J. Crystal Growth, Vol. 108, pp. 219-224,1991.
42. J. J. Derby, L. J. Atherton, and P. M. Gresho, An Integrated Process Model for the Growth of Oxide Crystals by the Czochralski Method, J. Crystal Growth, Vol. 97, pp. 792-826,1989.
43. T. Tsukada, M. Hozawa, and N. Imaishi, Global Analysis of Heat Transfer in Cz Crystal Growth of Oxide, J. Chem. Eng. Jpn., Vol. 27, pp. 25-31, 1994.
44. 3 Melt, J. Materials Processing & Manufacturing Sci., Vol. 4, pp. 41-44, 1995.
45. Q. Xiao and J. J. Derby, The Role of Internal Radiation and Melt Convection in Czochralski Oxide-Growth - Deep Interface, Interface Inversion and Spiraling, J. Crystal Growth, Vol. 128, pp. 188-194, 1993.
46. Q. Xiao and J. J. Derby, Heat-Transfer and Interface Inversion During the Czochralski Growth of Yttrium-Aluminum-Gamet and Gadolinium-Gallium-Gamet, J. Crystal Growth, Vol. 139, pp. 147-157,1994.
47. T. Tsukada, K. Kakinoki, M. Hozawa, and N. Imaishi, Effect of Internal Radiation within Crystal and Melt on Czochralski Crystal-Growth of Oxide, Int. J. Heat Mass Transfer, pp. 2707-2714, 1995.
48. H. Matsushima and R. Viskanta, Effect of Internal Radiation Transfer on Natural Convection and Heat Transfer in a Vertical Crystal Growth Configuration, Int. J. Heat Mass Transfer, Vol. 33, pp. 1957-1968, 1990.
49. M. Kobayashi, T. Tsukada, and M. Hozawa, Effect of Internal Radiative Heat Transfer on the Convection in CZ Oxide Melt, J. Crystal Growth, Vol. 180, pp. 157-166,1997.
50. M. Kobayashi, T. Tsukada, and M. Hozawa, Effect of Internal Radiative Heat Transfer on Transition of Flow Modes in CZ Oxide Melt, J. Crystal growth, Vol. 208, pp. 459-465, 2000.
51. M. Kobayashi, T. Hagino, T. Tsukada, and M. Hozawa, Effect of Internal Radiative Heat Transfer on Interface Inversion in Cz Crystal Growth of Oxide, Presented at 3rd Int. Workshop on Modeling in Crystal Growth, Stony Brook, Oct. 17-20, 2000.
52. 3 single crystals by the Czochralski method, J. Crystal Growth, Vol. 166, pp. 370-374,1996.
53. Y Miyazawa, Effect of Magnetic Field on Melt Flow and Crystal Growth of Oxide Crystals, Prog. Cryst. Growth, Ch. 38, pp. 261-272, 1999.
54. C. J. Jing, S. Yasuhiro, N. Imaishi, and Y Miyazawa, Three Dimensional Numerical Simulation of Rotating Spoke Pattern in Oxide Melt under Vertical Magnetic Field, Int. J. Heat Mass Transfer, in press.