Use of magnetic fields in crystal growth from semiconductor melts

Physica B: Condensed Matter

Volumn 216, Issue 3-4, 1996, Pages 406-408

  Kakimoto, Koichi ^a   Yi, Kyung Woo ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; FLOW VISUALIZATION; LIQUID METALS; MAGNETIC FIELD EFFECTS; MAGNETIC FIELDS; MAGNETOHYDRODYNAMICS; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; SUPERCOMPUTERS; THREE DIMENSIONAL; X RAY RADIOGRAPHY;

AXISYMMETRIC TEMPERATURE BOUNDARY CONDITION; INTRINSIC STABILITY; MAGNETOHYDRODYNAMIC EQUATION; MOLTEN SILICON FLOW; SEMICONDUCTOR MELTS; THREE DIMENSIONAL NUMERICAL SIMULATION; THREE DIMENSIONAL PATTERN;

CRYSTAL GROWTH FROM MELT;

EID: 0029753831     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4526(95)00529-3     Document Type: Article

References (4)

1. K. Kakimoto, M. Eguchi and T. Hibiya, J. Crystal Growth 112 (1991) 819.
2. K.-W. Yi, M. Watanabe, M. Eguchi, K. Kakimoto and T. Hibiya, Jpn. J. Appl. Phys. 33 (1994) L487.
3. J. Baumgartl and G. Müller, Proc. VIIIth European Symp. on Materials and Fluid Sciences in Microgravity, Brussels, ESA-SP 333 (1992) p. 161.
4. K.-W. Yi, K. Kakimoto, M. Eguchi, M. Watanabe, T. Shyo and T. Hibiya, J. Crystal Growth 144 (1994) 20.