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Volumn 5, Issue , 2003, Pages

Design of 2.5V/5V mixed-voltage CMOS I/O buffer with only thin oxide device and dynamic N-well bias circuit

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; LEAKAGE CURRENTS; POWER SUPPLY CIRCUITS; SEMICONDUCTING SILICON;

EID: 0038420756     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (25)

References (13)
  • 2
    • 0038789371 scopus 로고
    • Mixing 3V and 5V ICs
    • Mar.
    • J. Williams, "Mixing 3V and 5V ICs," IEEE Spectrum, pp. 40-42, Mar. 1993.
    • (1993) IEEE Spectrum , pp. 40-42
    • Williams, J.1
  • 4
    • 0020733451 scopus 로고
    • An empirical model for device degradation due to hot-carrier injection
    • E. Takeda and N. Suzuki, "An empirical model for device degradation due to hot-carrier injection," IEEE Electron Device Lett., vol. 4, pp. 111-113, 1983.
    • (1983) IEEE Electron Device Lett. , vol.4 , pp. 111-113
    • Takeda, E.1    Suzuki, N.2
  • 5
    • 0028742177 scopus 로고
    • BSD protection in a mixed voltage interface and multirail disconnected power grid environment in 0.5- and 0.25-μm channel length CMOS technologies
    • S. Voldman, "BSD protection in a mixed voltage interface and multirail disconnected power grid environment in 0.5- and 0.25-μm channel length CMOS technologies," in Proc. EOS/ESD Symp., 1994, pp. 125-134.
    • (1994) Proc. EOS/ESD Symp. , pp. 125-134
    • Voldman, S.1
  • 7
    • 0002666776 scopus 로고    scopus 로고
    • Analog broadband communication circuits in pure digital deep sub-micron CMOS
    • K. Bult, "Analog broadband communication circuits in pure digital deep sub-micron CMOS," in Dig. Tech. Papers Int. Solid-state Circuits Conf., 1999, pp. 76-77.
    • (1999) Dig. Tech. Papers Int. Solid-state Circuits Conf. , pp. 76-77
    • Bult, K.1
  • 10
    • 0033221989 scopus 로고    scopus 로고
    • High-voltage-tolerant I/O buffers with low-voltage CMOS process
    • Nov.
    • G. Singh and R. Salem, "High-voltage-tolerant I/O buffers with low-voltage CMOS process," IEEE J. Solid-State Circuits, vol. 34, pp. 1512-1525, Nov. 1999.
    • (1999) IEEE J. Solid-State Circuits , vol.34 , pp. 1512-1525
    • Singh, G.1    Salem, R.2
  • 11
    • 0343898028 scopus 로고    scopus 로고
    • A versatile 3.3/2.5/1.8-V CMOS I/O driver built in a 0.2μm 3.5-nm Tox 1.8-V CMOS technology
    • Nov.
    • H. Sanchez, J. Siegel, C. Nicoletta, J. Nissen, and J. Alvarez, "A versatile 3.3/2.5/1.8-V CMOS I/O driver built in a 0.2μm 3.5-nm Tox 1.8-V CMOS technology," IEEE J. Solid-State Circuits, vol. 34, pp. 1501-1511, Nov. 1999.
    • (1999) IEEE J. Solid-State Circuits , vol.34 , pp. 1501-1511
    • Sanchez, H.1    Siegel, J.2    Nicoletta, C.3    Nissen, J.4    Alvarez, J.5
  • 12
    • 0035274598 scopus 로고    scopus 로고
    • 5.5-V I/O in a 2.5-V 0.25-μm CMOS technology
    • Mar.
    • A. Annema, G. Geelen, and P. De Jong, "5.5-V I/O in a 2.5-V 0.25-μm CMOS technology," IEEE J. Solid-State Circuits, vol. 36, pp. 528-538, Mar. 2001.
    • (2001) IEEE J. Solid-State Circuits , vol.36 , pp. 528-538
    • Annema, A.1    Geelen, G.2    De Jong, P.3
  • 13
    • 0036683874 scopus 로고    scopus 로고
    • Electrostatic discharge protection design for mixed-voltage I/O buffers
    • Aug.
    • M.-D. Ker and C.-H. Chung, "Electrostatic discharge protection design for mixed-voltage I/O buffers," IEEE J. Solid-State Circuits, vol. 37, pp. 1046-1055, Aug. 2002.
    • (2002) IEEE J. Solid-State Circuits , vol.37 , pp. 1046-1055
    • Ker, M.-D.1    Chung, C.-H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.