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Volumn 107, Issue 12, 2003, Pages 2085-2092

Gas-phase chemistry of NHxCly+ ions. 3. Structure, stability, and reactivity of protonated trichloramine

Author keywords

[No Author keywords available]

Indexed keywords

ALKALINITY; AMINES; ATOMS; COMPUTATIONAL METHODS; ENTHALPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; IONS; ISOMERS; MASS SPECTROMETRY; MOLECULAR STRUCTURE; NITROGEN; REACTION KINETICS;

EID: 0038400135     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp026979n     Document Type: Article
Times cited : (8)

References (59)
  • 1
    • 0037567863 scopus 로고
    • Chloramines and bromamines
    • John Wiley & Sons: New York
    • Nelson, G. D. Chloramines and Bromamines. Encyclopedia of Chemical Technology; John Wiley & Sons: New York, 1979; Vol. 5, p 565.
    • (1979) Encyclopedia of Chemical Technology , vol.5 , pp. 565
    • Nelson, G.D.1
  • 18
    • 4243267897 scopus 로고    scopus 로고
    • Method of forming pattern on steel substrate by reactive ion etching
    • Patent No. TW 430695 B 20010421, Taiwan
    • (a) Shr-Guang, L.; Hung-Rung, L.; Shiue-Shr, L.; Nian-Shiou, H. Method of forming pattern on steel substrate by reactive ion etching. Patent No. TW 430695 B 20010421, Taiwan, 2001.
    • (2001)
    • Shr-Guang, L.1    Hung-Rung, L.2    Shiue-Shr, L.3    Nian-Shiou, H.4
  • 19
    • 0038064988 scopus 로고    scopus 로고
    • CVD synthesis of silcon nitride materials having low hydrogen-content
    • Eur. Pat. Appl. 2001, Patent No. EP 1149934 A2 20011031
    • (b) Todd, M. A. CVD synthesis of silcon nitride materials having low hydrogen-content. Eur. Pat. Appl. 2001, Patent No. EP 1149934 A2 20011031.
    • Todd, M.A.1
  • 20
    • 0037727319 scopus 로고    scopus 로고
    • Method of forming a dielectric film by plasma enhanced CVD
    • Patent No. US 5763021 A 19980609
    • (c) Young, A. W.; Smith, D. D. Method of forming a dielectric film by plasma enhanced CVD. Patent No. US 5763021 A 19980609, 1998, 4 pp.
    • (1998) , pp. 4
    • Young, A.W.1    Smith, D.D.2
  • 21
    • 4243267898 scopus 로고    scopus 로고
    • Method of supplying a chlorine gas to reactor
    • Eur. Pat. Appl. 1996. Patent No. EP 730902 A1 19960911
    • (d) Okabe, I. Method of supplying a chlorine gas to reactor. Eur. Pat. Appl. 1996. Patent No. EP 730902 A1 19960911, 1996.
    • (1996)
    • Okabe, I.1
  • 22
    • 0038403250 scopus 로고    scopus 로고
    • Formation method of GaN film for semiconductor light emitting devise
    • Patent No. JP 08008186 A2 19960112
    • (e) Sato, J. Formation method of GaN film for semiconductor light emitting devise. Patent No. JP 08008186 A2 19960112.
    • Sato, J.1
  • 23
    • 25944453174 scopus 로고    scopus 로고
    • Plasma etching for selective patterning
    • Patent No. JP 07169756 A2 19950704, JP 08306675 A2 19961122
    • (f) Yamazaki, S. Plasma etching for selective patterning. Patent No. JP 07169756 A2 19950704, JP 08306675 A2 19961122.
    • Yamazaki, S.1
  • 32
    • 0008549546 scopus 로고
    • Bowers, M. T., Ed.; Academic Press: New York
    • (a) Meot-Ner. Gas-Phase Ion Chemistry; Bowers, M. T., Ed.; Academic Press: New York, 1979; Vol. 2, pp 198-268.
    • (1979) Gas-Phase Ion Chemistry , vol.2 , pp. 198-268
    • Meot-Ner1
  • 54
    • 0032366914 scopus 로고    scopus 로고
    • Evaluated gas-phase basicities and proton affinities of molecules: An update
    • Hunter, E. P.; Lias, S. G. Evaluated Gas-Phase Basicities and Proton Affinities of Molecules: An Update. J. Phys. Chem. Ref. Data 1998.
    • (1998) J. Phys. Chem. Ref. Data
    • Hunter, E.P.1    Lias, S.G.2
  • 58
    • 0038403303 scopus 로고    scopus 로고
    • note
    • +), 987.0 kJ/mol at B3LYP level, 1002.9 kJ/mol at the CCDD(T).
  • 59
    • 0038064992 scopus 로고    scopus 로고
    • note
    • +), 1086.6 kJ/mol at B3LYP level, 1107.9 kJ/mol at the CCDD(T) (this work).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.