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At these C- and R-sapphire surfaces, terraces are aligned parallel to each other and separated by monatomic steps. The observed step heights are characteristic of the crystal plane (0.22 ± 0.02 nm for C and 0.36 ± 0.03 nm for R), and the terrace widths are the result of the orientational miscut of the crystal from its nominal plane.
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30
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0037996083
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note
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In ex situ analyses, film growth is quenched upon surface removal from solution. Although our previous studies of OPA SAMs on mica indicate the morphology of quenched films is qualitatively similar to that of SAMs growth in situ (i.e., isolated islands of close-packed molecules), there is concern that the process of quenching may introduce changes in submonolayer structures. Significantly, in the OPA/mica system, quantitative changes in the surface coverage and island size distribution were noted. Certainly, an in situ study of octadecanoic acid SAM growth on sapphire may be pursued in future experiments.
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0037996120
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note
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2)) vibrational mode could be identified. Although octadecanoic acid is bound very weakly to the sapphire surface (discussed in more detail later), we speculate it is chemisorbed as the carboxylate species, consistent with all other reports of carboxylic acid adsorption at alumina surfaces.
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