Annealing effects of polycrystalline silicon gate on electrical properties of thin gate oxide

Solid-State Electronics

Volumn 42, Issue 4, 1998, Pages 557-566

  Cho, Won J U ^a   Kim, Eung Soo ^b   Kang, Jun Jin ^a   Rha, Kwan Goo ^a   Kim, Hong Seok ^a  

^a Hynix Semiconductor Inc   (South Korea)

^b Pusan University of Foreign Studies   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; LEAKAGE CURRENTS; MOS CAPACITORS; OXIDES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

DOPANT ACTIVATION; POLYCRYSTALLINE SILICON GATES;

GATES (TRANSISTOR);

EID: 0032041037     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00285-2     Document Type: Article

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